IndiumV3, Main, Repository, bibRecord, 00A443

Nanowire transistors with ferroelectric gate dielectrics: Enhanced performance and memory effects

Identifieur interne : 00A443 ( Main/Repository ); précédent : 00A442; suivant : 00A444

Nanowire transistors with ferroelectric gate dielectrics: Enhanced performance and memory effects

Auteurs : RBID : Pascal:04-0242329

Descripteurs français

Pascal (Inist)
- 8530T, 8535, Etude expérimentale, Transistor effet champ, Nanofil, Matériau ferroélectrique, Matériau diélectrique, Plomb composé, Zirconium composé, Titane composé, Indium composé, Oxygène composé.

English descriptors

KwdEn :
- Dielectric materials, Experimental study, Ferroelectric materials, Field effect transistors, Indium compounds, Lead compounds, Nanowires, Oxygen compounds, Titanium compounds, Zirconium compounds.

Abstract

Integration of ferroelectric materials into nanoscale field-effect transistors offers enormous promise for superior transistor performance and also intriguing memory effects. In this study, we have incorporated lead zirconate titanate (PZT) into In₂O₃ nanowire transistors to replace the commonly used SiO₂ as the gate dielectric. These transistors exhibited substantially enhanced performance as a result of the high dielectric constant of PZT, as revealed by a 30-fold increase in the transconductance and a 10-fold reduction in the subthreshold swing when compared to similar SiO₂-gated devices. Furthermore, memory effects were observed with our devices, as characterized by a counter-clockwise loop in current-versus-gate-bias curves that can be attributed to the switchable remnant polarization of PZT. Our method can be easily generalized to other nanomaterials systems and may prove to be a viable way to obtain nanoscale memories. © 2004 American Institute of Physics.

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Pascal:04-0242329

Le document en format XML

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<author><name sortKey="Li, Chao" uniqKey="Li C">Chao Li</name>
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<author><name sortKey="Zhang, Daihua" uniqKey="Zhang D">Daihua Zhang</name>
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<front><div type="abstract" xml:lang="en">Integration of ferroelectric materials into nanoscale field-effect transistors offers enormous promise for superior transistor performance and also intriguing memory effects. In this study, we have incorporated lead zirconate titanate (PZT) into In<sub>2</sub>
O<sub>3</sub>
 nanowire transistors to replace the commonly used SiO<sub>2</sub>
 as the gate dielectric. These transistors exhibited substantially enhanced performance as a result of the high dielectric constant of PZT, as revealed by a 30-fold increase in the transconductance and a 10-fold reduction in the subthreshold swing when compared to similar SiO<sub>2</sub>
-gated devices. Furthermore, memory effects were observed with our devices, as characterized by a counter-clockwise loop in current-versus-gate-bias curves that can be attributed to the switchable remnant polarization of PZT. Our method can be easily generalized to other nanomaterials systems and may prove to be a viable way to obtain nanoscale memories. © 2004 American Institute of Physics.</div>
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 nanowire transistors to replace the commonly used SiO<sub>2</sub>
 as the gate dielectric. These transistors exhibited substantially enhanced performance as a result of the high dielectric constant of PZT, as revealed by a 30-fold increase in the transconductance and a 10-fold reduction in the subthreshold swing when compared to similar SiO<sub>2</sub>
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Nanowire transistors with ferroelectric gate dielectrics: Enhanced performance and memory effects

Nanowire transistors with ferroelectric gate dielectrics: Enhanced performance and memory effects

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

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Pour manipuler ce document sous Unix (Dilib)

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